[THE INVESTOR] Samsung Electronics said April 20 that it has finalized the development of second generation 10-nanometer FinFET process technology, which will help it secure more foundry business partners.

While the Korean chipmaker developed the industry’s first-generation 10-nanometer FinFET technology, the company said the latest development has improved performance and power efficiency by 10 percent and 15 percent, respectively.

Samsung already adopted the first-generation technology on its Exynos 9 and Qualcomm’s Snapdragon 835.

The company said it seeks to diversify its foundry clients while applying its technology to a wider scope of industries, including wearables, the Internet of Things and network segments.

By Alex Lee and newswires (alexlee@heraldcorp.com)